[Retired]RE200B PIR Infrared Sensor (Core sensor of PIR)

Description

See the picture how it looks like, it’s the core sensor of PIR, get more detailed information at this adafruit page.

• Size: 8.3 * 4.2mm
• Sensitive element area: 2.0 × 1.0mm2
• Substrate material: Silicon
• Substrate thickness: 0.5mm
• Wavelength 7-14μm
• Average Transmittance:> 75%
• Output:> 2.5V (420 ° k blackbody modulation frequency 0.3-3.0Hz 1Hz bandwidth of 72.5db gain)
• Noise: <200mV (mVp-p) (25 ℃)
• Balance: <20%
• Operating voltage :2.2-15V
• Current: 8.5-24μA (VD = 10V, Rs = 47kω, 25 ℃)
• Source voltage :0.4-1 .1 V (VD = 10V, Rs = 47kω, 25 ℃)
• Operating temperature: -20 ℃ – +70 ℃
• Storage temperature: -35 ℃ – +80 ℃
• Field: 139 ° × 126 °
• Package: DIP

Additional information

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