Transistor

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Name Type Type Prameter
S8050 Switch NPN -
SS8050LT1 Example Example
SS8550LT1 Example Example
S9012 Example Example
S9013 Example Example
S9014 Example Example
MMBT3904LT1 Example Example
MMBT3906LT1 Example Example

Transistor

  • SPW20N603C - Vds 650V, Rds 0.19ohm, Id = 20.7A

Transistor

  • Transistor BJT is current-driven activated, more robust based on activated current, MOSFET is voltage driven activated, may influenced by small noise.
  • BJTs are preferred for low current applications, while MOSFETs are for high power functions.
NPN PNP Type Vceo Vcbo Collector Current Ic Power dissipation Pcm hFE
s8050 S8550 a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications 20 30 0.70 1W
9013 9012 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION Excellent hFE linearity 20 40 0.50 0.625W
9014 9015 PRE-AMPLIFIER, LOW LEVEL & LOW NOISE Excellent hFE linearity 45 50 0.10 0.45W
2N5551 2N5401 HIGH VOLTAGE SWITCHING TRANSISTOR, High current gain 160/150 180/160 0.60 0.625W
2N3904 2N3906 NPN GENERAL PURPOSE AMPLIFIER 40 60/40 0.20 0.5 W
3DG3001 A1-H - type power switching transistor 450 V - 0.8A 0.8 W
MJE13003 - high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. 450 V 700V 1.5 A 1.1 W
2SC1815 2SA1015 LOW FREQUENCY PNP AMPLIFIER TRANSISTOR 50 60/50 0.15A -
2SC945 2SA733 LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 50 60 0.15 -