Difference between revisions of "Transistor"

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(Bias Resistor built-in Transistor)
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* Series MMBT, S8xxx, S9xxx
+
#redirect [[category: Transistor]]
{| class="wikitable sortable"
 
|-
 
! Name !! Type !! Type !! Prameter
 
|-
 
| S8050 || Switch || NPN || -
 
|-
 
| SS8050LT1 || Example || Example
 
|-
 
| SS8550LT1 || Example || Example
 
|-
 
| S9012 || Example || Example
 
|-
 
| S9013 || Example || Example
 
|-
 
| S9014 || Example || Example
 
|-
 
| MMBT3904LT1 || Example || Example
 
|-
 
| MMBT3906LT1 || Example || Example
 
|}
 
== Transistor ==
 
* SPW20N603C - Vds 650V, Rds 0.19ohm, Id = 20.7A
 
 
 
== Transistor ==
 
* Transistor BJT is current-driven activated, more robust based on activated current, MOSFET is voltage driven activated, may influenced by small noise.
 
* BJTs are preferred for low current applications, while MOSFETs are for high power functions.
 
{| class="wikitable sortable"
 
|-
 
! NPN || PNP !! Type !! Vceo !! Vcbo !! Collector Current Ic !! Power dissipation Pcm !! hFE
 
|-
 
| s8050 || S8550 || a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications || 20 || 30 || 0.70 || 1W
 
|-
 
| 9013 || 9012|| 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION Excellent hFE linearity || 20|| 40 || 0.50 || 0.625W
 
|-
 
| 9014 || 9015|| PRE-AMPLIFIER, LOW LEVEL & LOW NOISE  Excellent hFE linearity || 45 || 50 || 0.10 || 0.45W
 
|-
 
| 2N5551 || 2N5401|| HIGH VOLTAGE SWITCHING TRANSISTOR, High current gain  || 160/150||180/160 || 0.60 || 0.625W
 
|-
 
| 2N3904 || 2N3906 || NPN GENERAL PURPOSE AMPLIFIER || 40 || 60/40 || 0.20 || 0.5 W
 
|-
 
| 3DG3001 A1-H || - || type power switching transistor|| 450 V|| - || 0.8A || 0.8 W
 
|-
 
| MJE13003 || - || high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.  || 450 V || 700V || 1.5 A || 1.1 W
 
|-
 
| 2SC1815 || 2SA1015 || LOW FREQUENCY PNP AMPLIFIER TRANSISTOR || 50 || 60/50 || 0.15A || -
 
|-
 
| 2SC945 || 2SA733 || LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR  || 50 || 60 || 0.15 || -
 
|}
 
* MMBT5401 - Vce = -150V, Ic = -600mA
 
* [http://www.unisonic.com.tw/product2.asp?BClass=154 reference page.]
 
 
 
== Bias Resistor built-in Transistor ==
 
* DTC143ECA - 23 - 4.7K / 4.7K
 
 
 
* DTC143ZCA - E23 - 4.7K / 47K
 
 
 
[[category: RCL]]
 

Latest revision as of 04:47, 29 June 2020